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| MS1508 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features * * * * * * * 400 MHz 28 VOLTS POUT = 125 WATTS GP = 7.0 dB GAIN MINIMUM EFFICIENCY 60% GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1508 is a 28 V Class C gold metallized epitaxial silicon NPN planar transistor designed for UHF military and commercial equipment. The MS1508 is an internally matched, broadband device optimized for operation within the 225 - 400 MHz frequency range. This device utlizies diffused emitter resistors to achieve 10:1 VSWR load mismatch capability at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Value 60 33 4.0 15 270 +200 -65 to +150 Unit V V V A W C C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.65 C/W 053-7089 Rev - 10-2002 MS1508 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVCBO BVCES BVCEO BVEBO ICBO HFE IC = 100 mA IC = 80 mA IC = 50 mA IE = 20 mA VCB = 30 V VCE = 5 V STATIC Test Conditions Min. IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 mA 60 60 33 4.0 --20 Value Typ. ------------- Max. --------10 200 Unit V V V V mA --- DYNAMIC Symbol POUT GP C f = 400 MHz f = 400 MHz f = 400 MHz Test Conditions Min. PIN = 25 W PIN = 25 W PIN = 25 W VCC = 28 W VCC = 28 W VCC = 28 W 125 7.0 60 Value Typ. ------- Max. ------- Unit W dB % IMPEDANCE DATA FREQ 225 MHz 400 MHz POUT = 125 W VCC = 28 V ZIN() ) 0.5 + j2.5 1.5 + j1.7 ZCL() ) 8.8 - j3.5 5.0 - j0.0 053-7089 Rev - 10-2002 MS1508 PACKAGE MECHANICAL DATA 053-7089 Rev - 10-2002 |
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